SISPAD 2018 - International Conference on Simulation of Semiconductor Processes and Devices 2018

The SISPAD conference series provides an open forum for the presentation and discussion of the latest results in process and device simulation. The conference is the leading forum for Technology Computer-Aided Design (TCAD) and is held alternatingly in the United States, Japan, and Europe in September. [source: http://www.sispad.info/]
Topics
Original contributions are solicited on topics that include but are not limited to:
Modeling and simulation of established semiconductor device, including FinFETs, GAA FETs, ultra-thin SOI devices, optoelectronic devices, TFTs, sensors, power electronic devices, and organic electronic devices.
Modeling and simulation of emerging devices including tunnel FETs, SETs, spintronic devices, straintronic devices, bio-electronic devices, and new material-based devices for various applications
Modeling and simulation of interconnects, including noise and parasitic effects
Modeling and simulation of all sorts of semiconductor processes, including first principles material design, and growth simulation of nano-scale fabrication
Advances in fundamental aspects of device modeling and simulation, including of charge, spin, and thermal transport, of collective states including spin/magnetic and charge, and of fluctuation, noise, and reliability.
Numerical methods and algorithms, including grid generation, user-interface, and visualization
Compact modeling for circuit simulation, including low-power, high frequency, and power electronics applications
Process/device/circuit co-simulation in context with system design and verification, including for emerging devices
Modeling and simulation of equipment, topography, lithography
Benchmarking, calibration, and verification of simulators