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IPRM 2010 - 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

Date2010-05-31

Deadline2009-12-10

VenueTakamatsu, Japan Japan

Keywords

Websitehttp://www.iprm.jp/

Topics/Call fo Papers

Contribution addressing materials, growth, processing, devices and applications of InP and related materials are welcome. Contributions addressing the use of other materials for traditional InP applications are also encouraged. Topics of interest include, but are not limited to the followings.
Characterization and Bulk Materials
* Advances in bulk crystal growth (Including nitride substrate preparation such as InN, GaN, AlN etc.)
* Novel characterization methods
* Defect control in bulk crystals and epitaxial layers
* Novel processing techniques for III-V materials
Epitaxy
* Recent developments in epitaxial growth (MBE, GSMBE, MOVPE,…)
* Doping and characterization
* Growth, fabrication and properties of 0D, 1D and 2D structures
* Selective area growth and growth on structured substrates
* Epitaxy of novel alloys (N and Sb-based alloys)
* Hetero-epitaxy and other techniques for III-V/Si applications
Optoelectronics and Related Processing Technologies
* Performance improvement of lasers, amplifiers, guided wave devices, quantum photonic devices, photonic integrated circuits
* Novel devices for optical communication systems, optical switching, and optical signal processing
* Novel photodetectors and modulators, ...
* Solar cells and infra-red detectors and arrays
* Advanced device processing and packaging technologies
Electron Devices and Related Processing Technologies
The aim of this area is to discuss InP electron device technologies and physics. Papers are solicited in the following areas: (but are not limited to these areas)
* Ultra-fast microelectronic devices (HBTs, HEMTs, RTDs,…)
* State-of-the-art analog, digital, and mixed-signal electronics on InP and related compound semiconductors
* Related processing to electron devices
Nanostructures and Novel Materials
* Quantum dots and quantum wires
* Vertical nanowires
* Novel compound semiconductor materials integrated on III-Vs and elemental semiconductors
* Photonic crystals and nanodevices with strong photon confinement
* Nanoelectronic devices
* Plasmonics
* Spintronic materials

Last modified: 2010-06-04 19:32:22