IMW 2012 - International Memory Workshop (IMW)

This year, the fourth IEEE International Memory Workshop (IMW) will be held at the MELIA Milano, Italy, from Sunday May 20th through Wednesday May 23rd, 2012. This conference brings the memory community together in a workshop environment to discuss the memory process and design technologies, applications, market needs and strategies. It is sponsored by the IEEE Electron Devices Society and meets annually in May.
Although it is the fourth IMW meeting to be held this year, it has a long history of Non-Volatile Semiconductor Memory Workshops (NVSMW) dating back to 1976. In 2008, NVSMW and the International Conference on Memory Technology and Design (ICMTD) merged to incorporate both the volatile and non-volatile memory aspects in one forum while maintaining the workshop experience. And the scope was extended from non-volatile memory technology and design, which had been successfully discussed in more than 30 years of NVSMW, to the other memory technologies, which were the focus of ICMTD.
The IMW is a unique forum for specialists in all aspects of memory (nonvolatile & volatile) microelectronics and people with different backgrounds who wish to gain a better understanding of the field. The morning and afternoon technical sessions are organized in a manner that provides ample time for informal exchanges amongst presenters and attendees. The evening panel discussions will address hot topics in the memory and memory system field. Papers are solicited in the many aspects of memory technology, including:

Device Physics
Quality and Reliability

Cell Design
New Concepts and Technologies

Integrated Circuits
Solid State Disks, Memory Cards, 3D

Processing
Programmable Logic

Testing
New Applications
IMW is attended by a wide international community from North America, Europe and Asia. The number of attendees typically exceeds 300 in recent years, reflecting the growing interest in the workshop. Each year we receive over 80 paper submission and accept about 35 for oral presentation which corresponds to about 40% acceptance rate. Last year, we had a poster session for several qualified papers. In previous workshops we also organized short courses, such as Phase-Change Memory in 2009, Charge Trap Memory in 2010 or 3D memory and RRAM in 2011. We plan to continue both the poster session and short courses in 2012. Again the important goal of IMW is to provide an informal environment to encourage discussions and lively interactions among participants. The paper submission deadline is January 23rd, 2012. Papers are solicited in all aspects of memory technology (Flash, DRAM, SRAM, PCRAM, RRAM, MRAM, charge trap memory, embedded memory, and other types of memories).
We look forward to seeing you next May at IMW 2012 in Milano.
General Chairman Technical Chairman Finance Chairman
Jungdal Choi
Pranav Kalavade
Agostino Pirovano
Samsung electronics
Intel
Micron
San #16 Banwol-Dong, Hwasung City Gyeonggi-Do, Korea, 445-701 2200 Mission College Blvd Santa Clara, CA, 95054 Via C. Olivetti 2
20864 Agrate Brianza (MB), Italy
Phone: 82-31-208-2800 Phone:+1-408-765-5249 Phone:+39-039-637-6814
email: jdchoi-AT-samsung.com email: pranav.kalavade-AT-intel.com email: apirovan-AT-micron.com