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SISPAD 2011 - 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)



VenueTokyo, Japan Japan



Topics/Call fo Papers

All aspects of device simulation, including transport in nano-structures and next generation devices such as Fin/tri-gate, UTSOI, and structures using non-conventional materials, effects of strain on carrier transport, models of device scaling limits, quantum effects, reliability, fluctuations, novel nano-scale devices such as QCA, SET, CNT, and molecular devices.

All aspects of front and back end process simulation, including both continuum and atomistic approaches, models for dopant activation and diffusion, oxidation, silicide growth, interface effects, effects due to stress, nano-scale fabrication, and design of new materials.

Equipment, topography, and lithography simulation.

Virtual fab implementations and algorithms for computational lithography.

Interconnect modeling and algorithms including noise and parasitic effects.

Compact device modeling for circuit simulation, including high frequency and noise modeling.

Integration of circuit, device, process simulation with applications to performance modeling of circuits.

User interfaces and visualization.

High performance computing, advanced numerical methods and algorithms.

Mesh generation and adaptation.

Simulations of new memory structures such as nanocrystal, phase change, MRAM, and devices such as microsensors, microactuators, optoelectronics devices, lasers, and flat panel displays.

Process and device simulation for power generation, control and storage including photovoltaics, power devices, smart power, and other "green technologies".

Benchmarking, calibration, and verification of simulator models.

Last modified: 2010-09-19 21:51:48