ICSCRM 2009 - 13th International Conference on Silicon Carbide and Related Materials ICSCRM 2009

The aim of the conference is to present and discuss recent progress in crystal growth, characterization and control of material properties, as well as other basic research issues concerning silicon carbide (SiC) and other wide-bandgap semiconductors involving III-nitrides and diamond. The scope should cover but is not limited to theoretical and experimental investigations.

New research results relevant to wafer production processes, device fabrication technologies and device applications will also be topics of the conference. The objective is to promote the development and commercialization of advanced devices and circuits used for energy saving, high voltage switching, high frequency, high power amplification and high temperature operation.

The conference also serves as an international forum for the exchange of ideas on recent scientific and technical issues among researchers and engineers in industrial, academic and public sectors.

Topics
Fundamentals (Theoretical and Experimental)
SiC Bulk Growth
SiC Epitaxial Growth
New Materials Grown on SiC
Material Characterization
Defect Engineering
Surfaces and Interfaces
Device Fabrication Processes
Devices (Power Switching Devices, RF Power Devices, High-Temperature Devices, Radiation-Resistant Devices, etc.)
Device Physics (Measurement, Modeling, Simulation and Reliability)
Packaging and Modular Technology
Circuits and Applications
Notes to Authors
The official language of the conference is English, which will be used for all presentations and printed materials. Authors are expected to present their papers in person at the conference.

Publication of Papers
The proceedings will be published in a conference series. The authors of accepted abstracts will be asked to submit manuscripts before the conference to facilitate refereeing. The manuscript format and detailed instructions will be forwarded to the authors at the time of notification of acceptance.