SOI 2011 - 2011 IEEE International SOI Conference

SUBMISSION DEADLINE 6-May-2011

AREAS OF FOCUS

DEVICE PHYSICS and MODELING
SUBSTRATE ENGINEERING (III-V advanced substrates, hybrid SI and III-V integration)
NEW DEVICE / PHYSICS USING ADVANCED SUBSTRATES (III-V CMOS, hybrid SI and III-V)
MANUFACTURABILITY and PROCESS INTEGRATION of SOI DEVICES
LOW-POWER SOI TECHNOLOGY and CIRCUIT DESIGN INFRASTRUCTURE
SOI CIRCUIT APPLICATIONS (high-performance MPU, SRAM, ASIC, high-voltage, RF, analog, mixed mode, etc.)
SOI DOUBLE and MULTIPLE GATE/VERTICAL CHANNEL STRUCTURES; OTHER NOVEL SOI STRUCTURESNEW SOI STRUCTURES, CIRCUITS, and APPLICATIONS (displays, microactuators, novel memories, optics, etc.)
SOI RELIABILIITY ISSUES (hot-carrier effects, radiation effects, high-temperature effects, etc.)
MATERIAL SCIENCE / MODIFICATION, SOI CHARACTERIZATION, MANUFACTURE
SOI SENSORs, MEMs, and RFIDs TECHNOLOGY and APPLICATIONS
3D INTEGRATION (imagers, power devices, wafer-to-wafer and die to wafer 3D integration)
SILICON or SOI PHOTONICS