HWCVD-6 2010 - Sixth International Conference on Hot-Wire Chemical Vapor Deposition (Cat-CVD) Process HWCVD 2010
Topics/Call fo Papers
Sixth International Conference on Hot-Wire Chemical Vapor Deposition (Cat-CVD) Process
HWCVD-6
September 13-17, 2010, Ecole Polytechnique,
Palaiseau (near Paris), France
Abstract acceptance on May 15, 2010
Registration will open on June 2010
Topics
This conference is designed to promote synergies between Hot-Wire Chemical Vapor Deposition researchers working on different materials (semiconductors, metal oxides, organics, etc…) and addressing different applications (solar cells, sensors, industrial coatings, etc…).
HWCVD (also known as Catalytic CVD, Hot Filament CVD, and more recently Initiated CVD) allows to achieve high quality silicon related materials (amorphous, nanocrystalline, polycrystalline and epitaxial), silicon alloys (nitrides, oxides, carbides), passivation coatings, thin film diamond, hard coatings, nanostructured carbon, carbon nanotubes, transition metal oxide nano-particles, and polymers. Device applications of HWCVD films include thin film transistors, solar cells (photovoltaics), light emitting diodes, gas sensors, electrochromic windows, organic devices, and micromechanical structures. Contributions using Hot-Wire chambers for dry etching, surface passivation, or chamber cleaning are also welcome.
Common themes will be process fundamentals (nucleation, coalescence, surface roughening, etc…), technical improvements (filament lifetime, etc…), new developments (process, apparatus), and technology transfer (industrial implementation).
Conference location
Ecole Polytechnique, Palaiseau (near Paris), France
Key Dates / Schedule
First Call Feb. 01, 2010
Call for Abstract March. 01, 2010
Deadline for submission April. 01, 2010
Notification of acceptance May. 15, 2010
Advanced Registration July. 01, 2010
Abstracts
Please submit your abstract consisting of a maximum of 200 words, and figures. They should clearly indicate the authors' full address, including e-mail. A template is available on the website. When you submit the abstract on the website, please indicate whether you prefer an oral or poster presentation.
Registration Fees
Please read the information given below carefully.
Advanced Registration before
July 01, 2010
(From Jun.01- July.01,2010) Registration after
July 01, 2010
(From July.01- Sept.17,2010)
Student
235 euro 275 euro
Regular
(Conference) 350 euro 400 euro
HWCVD-6
September 13-17, 2010, Ecole Polytechnique,
Palaiseau (near Paris), France
Abstract acceptance on May 15, 2010
Registration will open on June 2010
Topics
This conference is designed to promote synergies between Hot-Wire Chemical Vapor Deposition researchers working on different materials (semiconductors, metal oxides, organics, etc…) and addressing different applications (solar cells, sensors, industrial coatings, etc…).
HWCVD (also known as Catalytic CVD, Hot Filament CVD, and more recently Initiated CVD) allows to achieve high quality silicon related materials (amorphous, nanocrystalline, polycrystalline and epitaxial), silicon alloys (nitrides, oxides, carbides), passivation coatings, thin film diamond, hard coatings, nanostructured carbon, carbon nanotubes, transition metal oxide nano-particles, and polymers. Device applications of HWCVD films include thin film transistors, solar cells (photovoltaics), light emitting diodes, gas sensors, electrochromic windows, organic devices, and micromechanical structures. Contributions using Hot-Wire chambers for dry etching, surface passivation, or chamber cleaning are also welcome.
Common themes will be process fundamentals (nucleation, coalescence, surface roughening, etc…), technical improvements (filament lifetime, etc…), new developments (process, apparatus), and technology transfer (industrial implementation).
Conference location
Ecole Polytechnique, Palaiseau (near Paris), France
Key Dates / Schedule
First Call Feb. 01, 2010
Call for Abstract March. 01, 2010
Deadline for submission April. 01, 2010
Notification of acceptance May. 15, 2010
Advanced Registration July. 01, 2010
Abstracts
Please submit your abstract consisting of a maximum of 200 words, and figures. They should clearly indicate the authors' full address, including e-mail. A template is available on the website. When you submit the abstract on the website, please indicate whether you prefer an oral or poster presentation.
Registration Fees
Please read the information given below carefully.
Advanced Registration before
July 01, 2010
(From Jun.01- July.01,2010) Registration after
July 01, 2010
(From July.01- Sept.17,2010)
Student
235 euro 275 euro
Regular
(Conference) 350 euro 400 euro
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Last modified: 2010-06-04 19:32:22