CSICS 2010 - 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

developments in integrated circuits using compound semiconductors such as GaAs, InP, GaN, SiGe and other materials. Coverage embraces all aspects of the technology, from materials issues and device fabrication, through IC design and testing, high volume manufacturing, and system

From its beginning in 1978 as the GaAs IC symposium, CSICS
has evolved to become the preeminent international forum for
developments in compound semiconductor integrated circuits,
embracing GaAs, InP, GaN, SiGe, and more recently, CMOS
technology. Coverage includes all aspects of the technology,
from materials issues and device fabrication, through IC design
and testing, high volume manufacturing, and system applications.
The IEEE Compound Semiconductor IC Symposium (CSICS)
provides the ideal forum to present your latest results in highspeed
digital, analog, microwave/millimeter wave, mixed mode,
and optoelectronic integrated circuits. First-time papers
concerned with the utilization and application of InP, GaAs,
SiGe, GaN and other compound semiconductors in military and
commercial products are invited. Specific technical areas of
interest include:
? Innovative RFIC Device & Circuit Concepts
? Millimeter-wave/High-Speed CMOS IC
? Circuit Design & Fabrication
? Manufacturing Technology & Cost Issues
? CAD/CAM/CAT Tools & Techniques
? IC Testing & Methodology
? Packaging Technology
? Reliability
? Advanced Device Applications
? System Applications (e.g., wireless, vehicular, RADAR,
military)
? Optoelectronic and OEIC applications
Symposium Highlights
High quality technical papers will be selected from worldwide
submissions for oral presentation and publication in the
Symposium Digest. Invited papers and panel sessions on topics
of current importance to the Compound Semiconductor IC
community will complete the program. Extended versions of
selected papers from the Symposium will be published in a
special issue of the IEEE Journal of Solid State Circuits.