ISPSD 2014 - 2014 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

Participants wishing to make a presentation on the results of their recent research are cordially invited to submit a paper according to the following instructions. Accepted papers will be presented in either oral or poster sessions. Items to be submitted and instructions are as follows:
Topics:
High Voltage Power Devices: Medium and High Voltage Si bipolar devices such as IGBT, Thyristor, pn Diode, etc
Low Voltage Power Devices: Low and medium voltage Si unipolar devices such as power MOSFETs, SJ type devices, etc
New Material Power Devices: Power devices based on compound or new materials such as SiC, GaN, Diamond
Power ICs: Integrated power devices and circuitry on a single chip architecture
Module and Package Technologies: Integrated power modules and packaging technologies (functionality, power density, isolation, reliability, device cooling, temperature endurance, manufacturing, etc)