SiRF 2013 - 2013 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (SiRF)
Date2013-01-20
Deadline2012-07-12
VenueAustin, USA - United States
Keywords
Websitehttps://www.silicon-rf.org
Topics/Call fo Papers
Technical papers are solicited in the following area, but all papers related to Si-based RF systems are welcome:
Materials -
Devices -
IC Technologies -
Circuits -
Passives -
MEMS/NEMS -
Reliability Issues -
Measurement and Modeling -
Applications -
Nanoscale microwave -
Si photonics -
Epitaxy, strain engineering, characterization, stability issues, smart materials.
Physics, optimization, and scaling limits of SiGe HBTs, RF-CMOS, SOI CMOS, strained-Si CMOS, SiGe MOSFETs, Si-based MODFETs, mm-wave diodes.
Novel device structures, HBT and CMOS integration issues, heterogeneous integration, fabrication on high-resistivity Si and SOI, packaging issues, IC on polymer/paper.
Microwave and mm-wave building blocks, integrated transceivers, high-speed DAC and ADC, analog/mixed-signal circuit blocks, RFICs, RF sensors, RF power meters, RF biosensors.
Inductors, capacitors, thin film resistors, transmission lines, integrated antennas, transformers.
RF MEMS, micro-machining for improved passives, integration with Si-based circuits.
Yield and reliability concerns in high-frequency Si-based circuits, signal isolation issues, interference, substrate noise, RF impedance mismatch robustness, cooling architecture.
Multi-physics modeling, electromagnetic simulation of complex RF systems, robust measurement and de-embedding techniques, methods of built-in-self-test and built-in-self-calibration, correlation of high-frequency parameters with easy-to-measure DC/AC parameters.
System-on-a-Chip (SoC) and System-in-a-Package (SiP) solutions for mm-wave sub-systems and systems, integration of Si-based photonic elements with electronic circuits, UWB architecture, RFI, wireless sensor architectures, health monitoring, medical diagnostics.
Nano (CNT, nanowire, dots, graphene), quantum, multi-gigabit optical, and THz materials, devices, and circuits.
Si-based photonic modulator, detector, integrated photonic components with electronic circuits, radio over fiber.
Materials -
Devices -
IC Technologies -
Circuits -
Passives -
MEMS/NEMS -
Reliability Issues -
Measurement and Modeling -
Applications -
Nanoscale microwave -
Si photonics -
Epitaxy, strain engineering, characterization, stability issues, smart materials.
Physics, optimization, and scaling limits of SiGe HBTs, RF-CMOS, SOI CMOS, strained-Si CMOS, SiGe MOSFETs, Si-based MODFETs, mm-wave diodes.
Novel device structures, HBT and CMOS integration issues, heterogeneous integration, fabrication on high-resistivity Si and SOI, packaging issues, IC on polymer/paper.
Microwave and mm-wave building blocks, integrated transceivers, high-speed DAC and ADC, analog/mixed-signal circuit blocks, RFICs, RF sensors, RF power meters, RF biosensors.
Inductors, capacitors, thin film resistors, transmission lines, integrated antennas, transformers.
RF MEMS, micro-machining for improved passives, integration with Si-based circuits.
Yield and reliability concerns in high-frequency Si-based circuits, signal isolation issues, interference, substrate noise, RF impedance mismatch robustness, cooling architecture.
Multi-physics modeling, electromagnetic simulation of complex RF systems, robust measurement and de-embedding techniques, methods of built-in-self-test and built-in-self-calibration, correlation of high-frequency parameters with easy-to-measure DC/AC parameters.
System-on-a-Chip (SoC) and System-in-a-Package (SiP) solutions for mm-wave sub-systems and systems, integration of Si-based photonic elements with electronic circuits, UWB architecture, RFI, wireless sensor architectures, health monitoring, medical diagnostics.
Nano (CNT, nanowire, dots, graphene), quantum, multi-gigabit optical, and THz materials, devices, and circuits.
Si-based photonic modulator, detector, integrated photonic components with electronic circuits, radio over fiber.
Other CFPs
Last modified: 2012-01-09 19:11:59