SOI 2012 - 2012 IEEE International SOI Conference

A Fundamentals Class on Wednesday afternoon will allow participants to review and understand the basics of SOI devices and circuits. A Rump Session on Wednesday evening will encourage attendees to share their opinions and technical expertise on a chosen topic.

? SOI DEVICE PHYSICS AND MODELING
? SUBSTRATE ENGINEERING (III-V advanced substrates, hybrid SI and III-V integration, GaN on Si)
? NEW DEVICE / PHYSICS USING ADVANCED SUBSTRATES (III-V CMOS, hybrid SI ,III-V, GaN)
? MANUFACTURABILITY AND PROCESS INTEGRATION OF SOI DEVICES
? LOW-POWER SOI TECHNOLOGY AND CIRCUIT DESIGN INFRASTRUCTURE
? SOI CIRCUIT APPLICATIONS

(high-performance MPU, SRAM, ASIC, high-voltage, RF, analog, mixed mode, etc.)
? SOI DOUBLE AND MULTIPLE GATE/VERTICAL CHANNEL STRUCTURES;

OTHER NOVEL SOI STRUCTURES, NEW SOI STRUCTURES, CIRCUITS, AND
APPLICATIONS (displays, microactuators, novel memories, optics, etc.)
? SOI RELIABILIITY ISSUES (hot-carrier effects, radiation effects, high-temperature effects, etc.)
? MATERIAL SCIENCE / MODIFICATION, SOI CHARACTERIZATION, MANUFACTURE
? SOI SENSORS, MEMS, AND RFIDS TECHNOLOGY AND APPLICATIONS
? 3D INTEGRATION (imagers, power devices, wafer-to-wafer and die to wafer 3D integration)
? SOI PHOTONICS