NSREC 2012 - 2012 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2012)
Date2012-07-16
Deadline2012-02-04
VenueMiami, USA - United States
Keywords
Websitehttps://www.nsrec.com
Topics/Call fo Papers
Papers on nuclear and space radiation effects on electronic and photonic materials,
devices, circuits, sensors, and systems, as well as semiconductor processing
technology and design techniques for producing radiation-tolerant (hardened)
devices and integrated circuits, will be presented at this meeting of engineers,
scientists, and managers. International participation is strongly encouraged.
We are soliciting papers describing significant new findings in the following or
related areas:
Basic Mechanisms of Radiation Effects in Electronic Materials and Devices
■ Single Event Charge Collection Phenomena and Mechanisms
■ Radiation Transport, Energy Deposition and Dosimetry
■ Ionizing Radiation Effects
■ Materials and Device Effects
■ Displacement Damage
■ Processing-Induced Radiation Effects
Radiation Effects on Electronic and Photonic Devices and Circuits
■ Single Event Effects
■ MOS, Bipolar and Advanced Technologies
■ Isolation Technologies, such as SOI and SOS
■ Optoelectronic and Optical Devices and Systems
■ Methods for Hardened Design and Manufacturing
■ Modeling of Devices, Circuits and Systems
■ Particle Detectors and Associated Electronics for High-Energy Accelerators
■ Cryogenic or High Temperature Effects
■ Novel Device Structures, such as MEMS and Nanotechnologies
Space, Atmospheric, and Terrestrial Radiation Effects
■ Characterization and Modeling of Radiation Environments
■ Space Weather Events and Effects
■ Spacecraft Charging
■ Predicting and Verifying Soft Error Rates (SER)
Hardness Assurance Technology and Testing
■ New Testing Techniques, Guidelines and Hardness Assurance Methodology
■ Unique Radiation Exposure Facilities or Novel Instrumentation Methods
■ Dosimetry
New Developments of Interest to the Radiation Effects Community
devices, circuits, sensors, and systems, as well as semiconductor processing
technology and design techniques for producing radiation-tolerant (hardened)
devices and integrated circuits, will be presented at this meeting of engineers,
scientists, and managers. International participation is strongly encouraged.
We are soliciting papers describing significant new findings in the following or
related areas:
Basic Mechanisms of Radiation Effects in Electronic Materials and Devices
■ Single Event Charge Collection Phenomena and Mechanisms
■ Radiation Transport, Energy Deposition and Dosimetry
■ Ionizing Radiation Effects
■ Materials and Device Effects
■ Displacement Damage
■ Processing-Induced Radiation Effects
Radiation Effects on Electronic and Photonic Devices and Circuits
■ Single Event Effects
■ MOS, Bipolar and Advanced Technologies
■ Isolation Technologies, such as SOI and SOS
■ Optoelectronic and Optical Devices and Systems
■ Methods for Hardened Design and Manufacturing
■ Modeling of Devices, Circuits and Systems
■ Particle Detectors and Associated Electronics for High-Energy Accelerators
■ Cryogenic or High Temperature Effects
■ Novel Device Structures, such as MEMS and Nanotechnologies
Space, Atmospheric, and Terrestrial Radiation Effects
■ Characterization and Modeling of Radiation Environments
■ Space Weather Events and Effects
■ Spacecraft Charging
■ Predicting and Verifying Soft Error Rates (SER)
Hardness Assurance Technology and Testing
■ New Testing Techniques, Guidelines and Hardness Assurance Methodology
■ Unique Radiation Exposure Facilities or Novel Instrumentation Methods
■ Dosimetry
New Developments of Interest to the Radiation Effects Community
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Last modified: 2011-07-21 12:16:09