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MSM 2013 - 18th Microscopy of Semi-Conducting Materials (MSM XVIII)

Date2013-07-04 - 2013-07-08

Deadline2013-01-03

VenueOxford, UK - United Kingdom UK - United Kingdom

Keywords

Websitehttp://www.rms.org.uk/events/Forthcoming...

Topics/Call fo Papers

The conference will focus on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques including scanning probe microscopy and X-ray topography and diffraction will also be featured. Developments in materials science and technology covering the complete range of elemental and compound semiconductors will be described.
THE MAIN TOPIC AREAS
The characterisation of as-grown semiconductors in both bulk and thin film forms.
The study of nanostructures of all types from quantum dots, wires, etc to nanotubes.
The investigation of lattice defect and impurity behaviour in semiconducting materials.
The study of the effects of semiconductor processing treatments
? oxidation, nitridation, ion implantation, annealing, silicidation, etc.
The assessment of finished electronic devices, including studies of the influence of structural defects upon their behaviour and important new design features such as high/low-k dielectrics, etc.
Special conference sessions will focus attention on recent advances in a number of areas of particular current interest, for example:
Developments in the use of high resolution imaging and analytical transmission electron microscopy
? new methods of imaging, diffraction and spectroscopy
? studies of bulk material, layers, interfaces and devices
Advances in FIB milling and nanofabrication.
The nature of epitaxial layers, superlattices and quantum well, wire and dot structures
? strain relaxation, defect introduction, morphological distortion, self-organisation, luminescence.
Wide bandgap semiconductors, especially III-nitrides.
The structures of dislocations and defect boundaries in semiconductors.
Advances in studying device structures such as HBTs, MOSFETs, terahertz emitters, solar cells, etc.
Metal-semiconductor contacts and silicides.
The effects of processing treatments using both conventional and transient techniques.
The exploitation of advanced scanning techniques
? SEM-EBIC, SEM-CL, etc
? STM, AFM, SCM, SNOM, BEEM, etc.

Last modified: 2013-03-30 21:55:44