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SISC 2013 - 2013 IEEE 44th Semiconductor Interface Specialists Conference (SISC)



VenueArlington, USA - United States USA - United States



Topics/Call fo Papers

The SISC is a workshop-style conference that provides a forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest both formally through invited and contributed presentations, and informally during a variety of events including a poster presentation session. The conference will be held immediately prior to the IEDM. SISC is sponsored by the IEEE Electron Device Society.
The program includes talks from all areas of MOS science and technology, including but not limited to the following:
SiO2 and high-k dielectrics on Si and their interfaces
Insulators on high-mobility and alternative substrates (SiGe, Ge, III-V, SiC, etc.)
MOS gate stacks with metal gate electrodes
Stacked dielectrics for non-volatile memory
Oxide and interface structure, chemistry, defects, and passivation: Theory and experiment
Electrical characterization, performance and reliability of MOS-based devices
Surface cleaning technology and impact on dielectrics and interfaces
Dielectrics on nanowires, nanotubes, and graphene
Oxide electronics and multiferroics
Interfaces in photovoltaics, e.g. Si passivation

Last modified: 2012-04-01 17:38:02